讲座题目🕵️♀️：New HfOx Based Ferroelectric Memories 主讲人：吕杭炳 研究员 主持人：段纯刚 教授 开始时间🌃：2019-11-07 15:00:00 讲座地址🧖🏽：闵行校区物理楼226报告厅 主办单位：物理与电子科学学院
报告人简介： Hangbing Lv, senior member of IEEE, currently serves as a full professor in Institute of Microelectronics, Chinese Academy of Sciences (IMECAS). He was granted Outstanding Youth Foundation from National Natural Science Foundation of China (NSFC) and has more than 15 years of experience on R&D on emerging nonvolatile memories, including device physics, integration, Macro design, and applications. He has authored or co-authored more than 150 journal papers on Nature Communications, Advanced Materials, IEEE Electron Device Letters, as well as conference papers on IEDM, VLSI, IMW, et al. He currently serves as TPC member of IMW. 报告内容： The traditional memory devices cannot possess high speed and high density at the same time, the computing system needs to build up memory hierarchy to achieve the balance of performance and capacity. Due to significant performance gap between different levels of memory, massive amounts of data transportation will lead to the decrease of computational efficiency and bandwidth. The new doped ferroelectric HfOx is a promising material for memory application, with no obvious scaling issue that the conventional perovskite ferroelectric materials have. In this talk, the development of ferroelectric HfOx material will be firstly introduced and then will present two new devices based on HfOx ferroelectric material: ferroelectric diode and hybrid memory in ferroelectric transistor. The direction of ferroelectric diode is governed by the polarization of ferroelectric materials, showing excellent memory switching effect. Benefiting from the simple structure and build-in nonlinearity, this Fe-diode can be easily expanded into the three-dimensional structure for high density storage. In Fe-FET device, due to the intrinsic trap sites in HZO material, low voltage charge trapping effect could be observed, showing DRAM like performance, with high speed and high endurance. At higher voltage region, the Fe-FET device will work at polarization switching mode, exhibiting NVM like performance, with good retention and high speed. Due to the excellent compatibility with logic transistor, this hybrid Fe-FET memory could be a promising solution for eDRAM and eNVM in SOC system. |
